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(R)
MJD200 MJD210
COMPLEMENTARY SILICON POWER TRANSISTORS
s s s
STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4)
s
APPLICATIONS AUDIO AMPLIFIERS DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low voltage, low power, high gain, audio amplifier applications. The complementary PNP type is MJD210.
3 1
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Power Dissipation at T case 25 o C Storage Temperature Max Operating Junction Temperature Value MJD200 MJD210 40 25 8 5 10 12.5 -65 to 150 150 Unit
V V V A A W o C o C
For PNP types voltage and current values are negative.
June 1998
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MJD200 / MJD210
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 10 89.3
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage (I B = 0) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Transition Frequency DC Current Gain Test Conditions I C = 10 mA Min. 25 Typ. Max. Unit V
I CBO I EBO V CE(sat)
V CB = 40 V V CB = 40 V V BE = 8 V I C = 500 mA IC = 2 A IC = 5 A IC = 5 A IC = 2 A I C = 100 mA f = 10 MHz I C = 500 mA IC = 2 A IC = 5 A
T J = 125 o C
0.1 0.1 0.1
A A A V V V V V MHz
I B = 50 mA I B = 200 mA IB = 1 A IB = 1 A V CE = 1 V V CE = 10 V V CE = 1 V V CE = 1 V V CE = 2 V 65 70 45 10
0.3 0.75 1.8 2.5 1.6
V BE(sat) V BE(on) fT h FE
180
Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP type voltage and current values are negative.
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MJD200 / MJD210
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A"
B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
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MJD200 / MJD210
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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